Autor: |
D. Fuchs, K. Wolff, R. Schäfer, R. Thelen, M. Le Tacon, R. Schneider |
Jazyk: |
angličtina |
Rok vydání: |
2017 |
Předmět: |
|
Zdroj: |
AIP Advances, Vol 7, Iss 5, Pp 056410-056410-6 (2017) |
Druh dokumentu: |
article |
ISSN: |
2158-3226 |
DOI: |
10.1063/1.4973696 |
Popis: |
Two-dimensional electron systems found at the interface of SrTiO3-based oxide heterostructures often display anisotropic electric transport whose origin is currently under debate. To characterize transport along specific crystallographic directions, we developed a hard-mask patterning routine based on an amorphous CeO2 template layer. The technique allows preparing well-defined microbridges by conventional ultraviolet photolithography which, in comparison to standard techniques such as ion- or wet-chemical etching, does not induce any degradation of interfacial conductance. The patterning scheme is described in detail and the successful production of microbridges based on amorphous Al2O3-SrTiO3 heterostructures is demonstrated. Significant anisotropic transport is observed for T < 30 K which is mainly related to impurity/defect scattering of charge carriers in these heterostructures. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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