| Autor: |
Sebastiano Strangio, Pierpaolo Palestri, DAVID Esseni, Luca Selmi, Felice Crupi, Simon Richter, Qing-Tai Zhao, Siegfried Mantl |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 223-232 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2015.2392793 |
| Popis: |
We use mixed device-circuit simulations to predict the performance of 6T static RAM (SRAM) cells implemented with tunnel-FETs (TFETs). Idealized template devices are used to assess the impact of device unidirectionality, which is inherent to TFETs and identify the most promising configuration for the access transistors. The same template devices are used to investigate the VDD range, where TFETs may be advantageous compared to conventional CMOS. The impact of device ambipolarity on SRAM operation is also analyzed. Realistic device templates extracted from experimental data of fabricated state-of-the-art silicon pTFET are then used to estimate the performance gap between the simulation of idealized TFETs and the best experimental implementations. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
