Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL
| Autor: | R. M. Hassan |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | مجلة علوم ذي قار, Vol 3, Iss 1 (2019) |
| Druh dokumentu: | article |
| ISSN: | 1991-8690 2709-0256 |
| Popis: | In this work, we study the characteristic temperature of a quantum dot laser (QDL) in presence of internal optical loss and quantum efficiency. The control parameters (the constant component of internal loss coefficient, effective cross section, carrier excitation energies from a QD to the optical confinement layer (OCL), and the root mean square (RMS) of relative QD-size fluctuations) are used for achieving free carrier density in the OCL and threshold current density and its component. |
| Databáze: | Directory of Open Access Journals |
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