A Moderate Confinement O-, S-, C-, and L-Band Silicon Nitride Platform Enabled by a Rapid Prototyping Integrated Photonics Foundry Process

Autor: Cameron M. Naraine, Batoul Hashemi, Niloofar Majidian Taleghani, Jocelyn N. Westwood-Bachman, Cameron Horvath, Bruno L. Segat Frare, Hamidu M. Mbonde, Pooya Torab Ahmadi, Kevin Setzer, Alexandria McKinlay, Khadijeh Miarabbas Kiani, Renjie Wang, Ponnambalam Ravi Selvaganapathy, Peter Mascher, Andrew P. Knights, Jens H. Schmid, Pavel Cheben, Mirwais Aktary, Jonathan D. B. Bradley
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: IEEE Photonics Journal, Vol 16, Iss 6, Pp 1-15 (2024)
Druh dokumentu: article
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3503287
Popis: We describe a rapid prototyping process for silicon nitride photonic integrated circuits operating at wavelengths around 1.3 and 1.5 μm. Moderate confinement silicon nitride waveguides and other essential integrated photonic components, such as fiber-chip couplers, microring resonators, multimode interference-based 3-dB power splitters, and subwavelength grating metamaterial waveguides, were fabricated and characterized and are reported. The prototyping platform features a 400-nm-thick layer of silicon nitride grown via low-pressure chemical vapour deposition onto 4” silicon thermal oxide wafers and uses direct-write electron beam lithography to define single mode waveguide structures that exhibit losses of
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