| Autor: |
Lingrong Jiang, Jianping Liu, Aiqin Tian, Masao Ikeda, Liqun Zhang, Peng Wu, Wei Zhou, Hui Yang |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Fundamental Research, Vol 1, Iss 6, Pp 672-676 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2667-3258 |
| DOI: |
10.1016/j.fmre.2021.09.016 |
| Popis: |
The ridge morphology, which is related to random atomic step meandering, appears in thick AlInGaN films grown by metal organic chemical vapor deposition on both GaN templates and free-standing GaN substrates; this can be primarily attributed to the in-plane compressive strain in the thick layer. Therefore, a 2.5-μm Al0.08In0.0123GaN film with a slightly tensive strain was grown, with a regular and smooth step-flow morphology; the root mean square deviation of the film (with a size of 5 μm × 5 μm) was 0.56 nm. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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