Finite Element Analysis (FEA) of the Stress and Strain Distribution in Cone-Morse Implant–Abutment Connection Implants Placed Equicrestally and Subcrestally

Autor: Natalia Di Pietro, Mario Ceddia, Tea Romasco, Nilton De Bortoli Junior, Bruno Freitas Mello, Margherita Tumedei, Alessandro Specchiulli, Adriano Piattelli, Bartolomeo Trentadue
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: Applied Sciences, Vol 13, Iss 14, p 8147 (2023)
Druh dokumentu: article
ISSN: 2076-3417
DOI: 10.3390/app13148147
Popis: Peri-implant bone resorption has been reported around some implants after loading, which could create problems for the peri-implant soft and hard tissues’ long-term stability. The reasons for this are still not known. However, relevant importance could be given to this due to the presence of a bacterial contamination at the micro-gap level between implant and abutment. In this regard, external and internal implant–abutment assemblies have been shown to be much more permeable to bacterial colonization than Cone-Morse or conical connections. The placement of a subcrestal implant could have aesthetic advantages, therefore allowing a better prosthetic emergence profile. In literature, controversial experimental and clinical results have been reported on bone resorption around implants placed equicrestally and subcrestally. Interestingly, Finite Element Analysis (FEA) studies revealed to be extremely useful for assessing the peri-implant bone strain and stress. Thus, this study conducted a FEA evaluation of implants with a Cone-Morse implant–abutment assembly inserted into a bone block model mimicking equicrestal (0 mm) and subcrestal placements (−1 and −2 mm). Results demonstrated that maximum stresses were observed in the cortical bone around equicrestally placed implants, with the lowest in the 2 mm subcrestally placed implant and intermediate stresses within the 1 mm subcrestally placed implant. The cortical bone resulted more stressed under lateral loads than axial loads. In conclusion, this FEA study suggested a subcrestal implant placement ranging between −1 and −2 mm to obtain an adequate peri-implant stress pattern.
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