| Autor: |
Yi-Hsun Tsai, Yu-Hsun Wu, Yen-Yu Ting, Chu-Chun Wu, Jenq-Shinn Wu, Sheng-Di Lin |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
AIP Advances, Vol 9, Iss 10, Pp 105001-105001-5 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5116044 |
| Popis: |
We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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