NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching

Autor:	Elena Filatova, Aleksei Konashuk, Yuri Petrov, Evgeny Ubyivovk, Andrey Sokolov, Andrei Selivanov, Victor Drozd
Jazyk:	angličtina
Rok vydání:	2016
Předmět:	reram nexafs current instability local heating molecular oxygen Materials of engineering and construction. Mechanics of materials TA401-492 Biotechnology TP248.13-248.65
Zdroj:	Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 274-284 (2016)
Druh dokumentu:	article
ISSN:	1468-6996 1878-5514 14686996
DOI:	10.1080/14686996.2016.1182851
Popis:	We have studied the stability of the resistive switching process in the Al/(In2O3)0.9(SnO2)0.1/TiO2 assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO2 layer was studied using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The region of the current instability in the I-V characteristics was revealed. Presumably this current instability is supported by the amorphous structure of the TiO2 film but is initiated by the surface morphology of the Al substrate. A formation of the O2 molecules was established which occurs specifically in the region of the current instability that is a result of electrical Joule heating manifestation.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/f822f4f32baf4ea7b0218fbd2e9e5df0 Zobrazit plný text záznamu View record in DOAJ