Autor: |
Zhi-Yuan Yu, Zhi-He Guo, Yu-Chen Zhang, Xun Zhang, Yan Wang, Feng-Yang Ma, Yu Liu, Xia-Yan Xue, Qing-Yuan Jin, Jing Li, Jian Sun, Song-You Wang, Dong-Chen Wang, Ming Lu |
Jazyk: |
angličtina |
Rok vydání: |
2022 |
Předmět: |
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Zdroj: |
Results in Physics, Vol 34, Iss , Pp 105336- (2022) |
Druh dokumentu: |
article |
ISSN: |
2211-3797 |
DOI: |
10.1016/j.rinp.2022.105336 |
Popis: |
A luminescent Si nanocrystal (SiNC) thin film with photoluminescence quantum yield (PLQY) > 70% was made by using hydrogen silsesquioxane (HSQ), followed by long-time high-pressure hydrogenation. A net optical gain of 524 ± 21 cm−1 was obtained by means of variable stripe length-shifting excitation spot (VSL-SES). A rectangularly shaped SiO2 Fabry-Perot (F-P) cavity with size of 1.5 μm (width) × 0.7 μm (height) × 2000 μm (length) was made on top of the SiNC thin film. The waveguide F-P device was pumped with a 400 nm femtosecond pulsed laser. A threshold behavior of the light emission intensity as a function of the pumping power was observed. Other lasing characteristics including spectral narrowing, polarization of the emission, and small emission angle were also observed beyond the threshold pumping power. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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