THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR
| Autor: | H. M. Gadzhiev, M. E. Akhmedov, S. M. Gadzhieva, P. A. Kurbanova |
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| Jazyk: | ruština |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Вестник Дагестанского государственного технического университета: Технические науки, Vol 46, Iss 3, Pp 8-19 (2019) |
| Druh dokumentu: | article |
| ISSN: | 2073-6185 2542-095X |
| DOI: | 10.21822/2073-6185-2019-46-3-8-19 |
| Popis: | Objectives Development of energy-efficient light-emitting bipolar semiconductor structures.Method A method for transforming thermoelectric heat in bipolar semiconductor structures into optical-range electromagnetic radiation, which preserves the cooling effect on thermoelectric transitions, is proposed. Instead of transferring the information impulse electrically from the baseemitter light-emitting transition, the information is transferred directly to the light-absorbing basecollector transition by photons or following multiple re-reflections from mirror metal electrodes.Results Unlike conventional optocouplers discretely separated in space, the novel optocouplers described in the article are integrated into a single electronic component using the principle of LED radiation. As a result, light-emitting bipolar semiconductor structures will result in the creation of more powerful, faster and better integrated devices.Conclusion Light-emitting bipolar semiconductor structures will not only increase the reliability of electronic components across a wide range of performance characteristics, but also increase energy efficiency through the use of optical radiation recovery. The future development of light-efficient transistors improves integration and increases processor performance, at the same time as reducing the power consumption of the cooling system and the power supply of the device itself. |
| Databáze: | Directory of Open Access Journals |
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