Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG

Autor: Hasse Kore, Kip Detlef, Kränkel Christian
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: EPJ Web of Conferences, Vol 255, p 10003 (2021)
Druh dokumentu: article
ISSN: 2100-014X
DOI: 10.1051/epjconf/202125510003
Popis: We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.
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