Modeling semiconductor detector of especially pure germanium
| Autor: | Yury Vladimirovich Aleynikov, Yury Anatolievich Popov, Irina Valentinovna Prozorova, Alexander Andreevich Prozorov |
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| Jazyk: | ruština |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Известия Томского политехнического университета: Инжиниринг георесурсов, Vol 328, Iss 7 (2017) |
| Druh dokumentu: | article |
| ISSN: | 2500-1019 2413-1830 |
| Popis: | Relevance of the work. One of the major contemporary problems is the development of geo-ecology background radiation control methods and means of natural and technogenic origin on the basis of high-precision portable semiconductor detectors. The known methods for calculating such detectors by the Monte Carlo method is widely used in the field of radiation safety: radiation protection, calculations of nuclear reactors, screening and modeling of the detectors; the radiation parameters of the field of ionizing radiation sources are calculated. The MCNP program implementing the Monte Carlo method is a modeling tool for radiative transfer, mainly in those cases when the measurement are difficult or practically feasible. In the research the MCNP program was used for simulating the detector of high-purity germanium Ge (Li) and the method to improve the determination of the response function for this type of detector. The results obtained in the simulation are accurate enough, there is a good match between the model and the experimental data. The main aim of the research is to develop the computational model GC1020 type germanium detector for solving assessment detector efficiency. Research methods: construction and adjustment of the geometric and physical model of the detector; alternative calculations to determine the effectiveness of the registration detection monoenergetic gamma radiation using the MCNP5 program. Results. Modeling the high-purity germanium detector using the Monte Carlo method is important for the efficiency of registration in the case of samples with irregular geometry, and for large samples, where the effectiveness is difficult to assess experimentally. The paper introduces the calculation of the efficiency of a semiconductor detector which is widely used in our laboratory for various samples that were performed for the geometry of a point source; detector parameters were optimized with 5 % error between the MCNP and experimental performance at different distances from the detector. The optimized geometry of the detector was later confirmed by the effective transfer to other geometry. |
| Databáze: | Directory of Open Access Journals |
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