Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Autor:	Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	GaN HEMT gate driver p-GaN gate TSEP Schottky contact Technology
Zdroj:	Energies, Vol 14, Iss 23, p 8055 (2021)
Druh dokumentu:	article
ISSN:	14238055 1996-1073
DOI:	10.3390/en14238055
Popis:	In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.
Databáze:	Directory of Open Access Journals
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