| Autor: |
Keyvan Narimani, Stefan Trellenkamp, Andreas Tiedemann, Siegfried Mantl, Qing-Tai Zhao |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Applied Sciences, Vol 8, Iss 5, p 670 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2076-3417 |
| DOI: |
10.3390/app8050670 |
| Popis: |
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm Optimized devices also show excellent current saturation, an important feature for analog performance. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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