High-temperature oxidation behaviour of Si3N4 nanowires with different diameters
| Autor: | Zhao Shuang, Yang Feiyue, Chen Jun, Li Kunfeng, Fei Zhifang, Yang Zichun |
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| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Processing and Application of Ceramics, Vol 17, Iss 1, Pp 39-46 (2023) |
| Druh dokumentu: | article |
| ISSN: | 1820-6131 2406-1034 |
| DOI: | 10.2298/PAC2301039Z |
| Popis: | α-Si3N4 nanowires with diameters of 100-180 nm (Si3N4-W1) and 420-510 nm (Si3N4-W2) were synthesized by a modified chemical vapour deposition (CVD) method and their microstructure changes after high-temperature oxidation were studied. The results showed that both Si3N4 nanowires were not significantly oxidized when the temperature was lower than 900°C. However, the Si3N4-W1 microstructure began to change significantly after oxidation at 1200°C, while the Si3N4-W2 microstructure remained almost unchanged. Moreover, the Si3N4-W1 and Si3N4-W2 nanowires oxidized significantly after treatment at 1400°C, with weight gain of 26.4% and 13.7%, respectively. |
| Databáze: | Directory of Open Access Journals |
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