| Autor: |
L Nicolaï, J-M Mariot, U Djukic, W Wang, O Heckmann, M C Richter, J Kanski, M Leandersson, T Balasubramanian, J Sadowski, J Braun, H Ebert, I Vobornik, J Fujii, J Minár, K Hricovini |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
New Journal of Physics, Vol 21, Iss 12, p 123012 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1367-2630 |
| DOI: |
10.1088/1367-2630/ab5c14 |
| Popis: |
The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4 d and Bi 5 d _5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the $\overline{{\rm{\Gamma }}}$ point of the Brillouin zone. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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