GaN-nanopillar-based light-emitting diodes directly grown on multi-crystalline Si substrates

Autor: Yuichi Sato, Shingo Taniguchi, Sora Saito, Houyao Xue, Tsubasa Saito
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: AIP Advances, Vol 11, Iss 7, Pp 075110-075110-4 (2021)
Druh dokumentu: article
ISSN: 2158-3226
DOI: 10.1063/5.0052379
Popis: For the first time, light-emitting diodes based on gallium nitride nanopillar crystals were prepared directly on a multi-crystalline silicon substrate, which is widely utilized in low-cost solar cells. Several double-hetero-p–n-junction structures were fabricated, and bright light emission was obtained from the diodes. In addition, white-light emission was observed in another diode. The multi-crystalline Si substrate can be added to a candidate substrate to realize practical, novel, large-area light-emitting devices.
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