Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors
| Autor: | Taeho Park, Kyoungah Cho, Sangsig Kim |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Nanomaterials, Vol 14, Iss 6, p 493 (2024) |
| Druh dokumentu: | article |
| ISSN: | 14060493 2079-4991 |
| DOI: | 10.3390/nano14060493 |
| Popis: | In this study, we examine the electrical characteristics of triple-gate feedback field-effect transistors (TG FBFETs) over a temperature range of −200 °C to 280 °C. With increasing temperature from 25 °C to 280 °C, the thermally generated charge carriers increase in the channel regions such that a positive feedback loop forms rapidly. Thus, the latch-up voltage shifts from −1.01 V (1.34 V) to −11.01 V (10.45 V) in the n-channel (p-channel) mode. In contrast, with decreasing temperature from 25 °C to −200 °C, the thermally generated charge carriers decrease, causing a shift in the latch-up voltage in the opposite direction to that of the increasing temperature case. Despite the shift in the latch-up voltage, the TG FBFETs exhibit ideal switching characteristics, with subthreshold swings of 6.6 mV/dec and 7.2 mV/dec for the n-channel and p-channel modes, respectively. Moreover, the memory window widens with increasing temperature. Specifically, at temperatures above 85 °C, the memory windows are wider than 3.05 V and 1.42 V for the n-channel and p-channel modes, respectively. |
| Databáze: | Directory of Open Access Journals |
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