| Autor: |
Sapaev I. B., Sapaev B., Sadullaev S., Abdullayev J. Sh., Umarov A. V., Siddikov R. U., Mamasoliev A. A., Daliev K. S. |
| Jazyk: |
English<br />French |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
E3S Web of Conferences, Vol 413, p 04008 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2267-1242 |
| DOI: |
10.1051/e3sconf/202341304008 |
| Popis: |
It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5 Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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