| Autor: |
Yusuke Kumazaki, Shiro Ozaki, Yasuhiro Nakasha, Naoya Okamoto, Atsushi Yamada, Toshihiro Ohki |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Applied Physics Express, Vol 17, Iss 8, p 086504 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1882-0786 |
| DOI: |
10.35848/1882-0786/ad68c2 |
| Popis: |
This study describes high-power and high-efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) for future sub-terahertz wireless communications. A low-thermal-budget selective-area growth (SAG) process was developed to obtain low contact resistance with low trap states. Transmission lines and substrate structures were optimized to obtain high-thermal conductivity and low substrate resonance. Consequently, a high output power of 28.7 dBm (742 mW), output power density of 4.6 W mm ^−1 , and power-added efficiency (PAE) of 28.0% were achieved with pre-matched InAlGaN/AlN/GaN HEMTs at 90 GHz, which were superior combination of output power and PAE compared to the conventional high-temperature SAG process. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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