Oxygen-Plasma-Treated Al/TaOX/Al Resistive Memory for Enhanced Synaptic Characteristics
Autor: | Gyeongpyo Kim, Seoyoung Park, Minsuk Koo, Sungjun Kim |
---|---|
Jazyk: | angličtina |
Rok vydání: | 2024 |
Předmět: | |
Zdroj: | Biomimetics, Vol 9, Iss 9, p 578 (2024) |
Druh dokumentu: | article |
ISSN: | 2313-7673 |
DOI: | 10.3390/biomimetics9090578 |
Popis: | In this study, we investigate the impact of O2 plasma treatment on the performance of Al/TaOX/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O2-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O2-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability. The conduction mechanism is investigated by current–voltage (I–V) curve fitting. In addition, paired-pulse facilitation (PPF) is observed using partial short-term memory. Furthermore, 3- and 4-bit weight tuning with auto-pulse-tuning algorithms was achieved to improve the controllability of the synapse weight for the neuromorphic system, maintaining retention times exceeding 103 s in the multiple states. Neuromorphic simulation with an MNIST dataset is conducted to evaluate the synaptic device. |
Databáze: | Directory of Open Access Journals |
Externí odkaz: | |
Nepřihlášeným uživatelům se plný text nezobrazuje | K zobrazení výsledku je třeba se přihlásit. |
načítá se...