| Autor: |
Shiqiang Lu, Peng Shen, Hongye Zhang, Guozhen Liu, Bin Guo, Yehang Cai, Han Chen, Feiya Xu, Tongchang Zheng, Fuchun Xu, Xiaohong Chen, Duanjun Cai, Junyong Kang |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-022-30762-1 |
| Popis: |
Asymmetric n/p conductivity is a fundamental difficulty in wide bandgap semiconductors. Here the authors demonstrate a concept of orbital level engineering through sacrificial impurity coupling to achieve n-type conductivity (ne ~1016 cm-3) in hexagonal BN. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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