| Autor: |
Ahmed A. M. El-Amir, Takeo Ohsawa, Yoshitaka Matsushita, Yoshiki Wada, Kiyoshi Shimamura, Naoki Ohashi |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 8, Iss 11, Pp 115005-115005-5 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5056221 |
| Popis: |
This paper reports the results on fabrication methodology and photoresponse characteristics of Mg2Si0.53Ge0.47 pn-junction photodiode. At first, we have grown a Mg2Si0.53Ge0.47 single crystal with the Vertical Bridgman growth process. The grown crystal was characterized structurally and electrically by XRD, Laue, and Hall Effect measurements. XRD revealed the single-phase composition, Mg2Si0.53Ge0.47, of the grown crystal ingot. The clear Laue symmetrical diffraction pattern showed the single crystalline nature of the grown crystal. The Hall Effect measurement revealed the n-type conduction and the moderate Hall mobility (258 cm2/Vs), electrical resistivity (6.03E-02 Ω. cm), and carrier density (4.02E+17 cm-3) of the grown crystal. Such carrier density is low enough to allow depletion region formation in case of pn-junction diodes. In that sense, we have made up for the first time Mg2Si0.53Ge0.47 pn-junction photodiode by thermal diffusion of a thin Ag layer into n-Mg2Si0.53Ge0.47 substrate. The fabricated diode had an obvious rectification behavior and demonstrated a clear zero-biased photoresponse in the wavelength range from 0.95 to 1.85 μm, indicating its prominence for IR sensation in that wavelength domain. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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