Direct observation of single-atom defects in monolayer two-dimensional materials by using electron ptychography at 200 kV acceleration voltage

Autor: Ying Chen, Tzu-Chieh Chou, Ching-Hsing Fang, Cheng-Yi Lu, Chien-Nan Hsiao, Wei-Ting Hsu, Chien-Chun Chen
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Druh dokumentu: article
ISSN: 2045-2322
DOI: 10.1038/s41598-023-50784-z
Popis: Abstract Electron ptychography has emerged as a popular technology for high-resolution imaging by combining the high coherence of electron sources with the ultra-fast scanning electron coil. However, the limitations of conventional pixelated detectors, including poor dynamic range and slow data readout speeds, have posed restrictions in the past on conducting electron ptychography experiments. We used the Gatan STELA pixelated detector to capture sequential diffraction data of monolayer two-dimensional (2D) materials for ptychographic reconstruction. By using the pixelated detector and electron ptychography, we demonstrate the observation of the radiation damage at atomic resolution in Transition Metal Dichalcogenides (TMDs).
Databáze: Directory of Open Access Journals
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