An approach to model manufacturing of an enhanced swing differen-tial Colpitts oscillator based on heterostructures to increase density of their elements with account miss-match induced stress. On optimization of annealing

Autor: Evgeny L. Pankratov
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Journal of Kufa-Physics, Vol 12, Iss 02 (2020)
Druh dokumentu: article
ISSN: 2077-5830
2312-6671
DOI: 10.31257/2018/JKP/2020/120202
Popis: In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Databáze: Directory of Open Access Journals