| Autor: |
Shao Tang, Federico Tesler, Fernando Gomez Marlasca, Pablo Levy, V. Dobrosavljević, Marcelo Rozenberg |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
Physical Review X, Vol 6, Iss 1, p 011028 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2160-3308 |
| DOI: |
10.1103/PhysRevX.6.011028 |
| Popis: |
Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect—the commutation speed. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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