| Autor: |
Seung-Un Lee, Jaewook Jeong |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 8, Iss 8, Pp 085206-085206-7 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5040019 |
| Popis: |
In this paper, the short time annealing effects on the solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) were studied as a function of different ambient conditions. By comparing the effects of various inert gases as He, Ar, and N2 on the a-IGZO TFTs, it was found that the He-annealed TFTs prepared over a short annealing time of 30 min performed comparably to the 120 min N2-annealed samples. Similarities in the temperature dependency of the electrical characteristics of the He-annealed TFTs and the N2-annealed TFTs were also observed. These similarities are attributed to the high thermal speed of the He atoms, leading to a fast annealing effect. X-ray photoelectron spectroscopy results indicate that the superior performance of the short time He-annealed TFT does not originate from the difference in chemical residue such as OH-, but from the difference in active layer density. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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