Autor: |
Vaishali Dhare, Usha Mehta |
Jazyk: |
angličtina |
Rok vydání: |
2023 |
Předmět: |
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Zdroj: |
Journal of Electronic Science and Technology, Vol 21, Iss 1, Pp 100183- (2023) |
Druh dokumentu: |
article |
ISSN: |
2666-223X |
DOI: |
10.1016/j.jnlest.2023.100183 |
Popis: |
Quantum-dot cellular automata (QCA) is an emerging computational paradigm which can overcome scaling limitations of the existing complementary metal oxide semiconductor (CMOS) technology. The existence of defects cannot be ignored, considering the fabrication of QCA devices at the molecular level where it could alter the functionality. Therefore, defects in QCA devices need to be analyzed. So far, the simulation-based displacement defect analysis has been presented in the literature, which results in an increased demand in the corresponding mathematical model. In this paper, the displacement defect analysis of the QCA main primitive, majority voter (MV), is presented and carried out both in simulation and mathematics, where the kink energy based mathematical model is applied. The results demonstrate that this model can also be valid for the displacement defect in QCA MV. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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