| Autor: |
Vincent Rienzi, Jordan Smith, Norleakvisoth Lim, Hsun-Ming Chang, Philip Chan, Matthew S. Wong, Michael J. Gordon, Steven P. DenBaars, Shuji Nakamura |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Crystals, Vol 12, Iss 8, p 1144 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst12081144 |
| Popis: |
A III-nitride red LED with an active region temperature of 835 °C on a Si substrate utilizing a strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm at 1 A/cm2 to 636 nm at 150 A/cm2. The on-wafer external quantum efficiency was 0.021% at 7 A/cm2 with an emission wavelength of 655 nm. The LED grown on a Si substrate exhibited a 116 nm redshift when compared to a co-loaded LED grown on sapphire. This is attributed to the difference in strain state for the III-nitride layers grown on Si compared to sapphire, allowing for more indium to be incorporated in the LED grown on Si. This suggests efficient III-nitride red LEDs and µLEDs on Si with a SRT can be realized with further material, device structure, and processing optimizations. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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