| Autor: |
Nataliya A. Verezub, Anatoly I. Prostomolotov |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Modern Electronic Materials, Vol 10, Iss 3, Pp 185-193 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2452-1779 |
| DOI: |
10.3897/j.moem.10.3.140627 |
| Popis: |
Mathematical simulation results for inert gas (argon) dynamics in the rarefied atmosphere of Redmet-10 Cz single crystal silicon growth furnace chamber have been reported. Gas flows in cold (room temperature) and hot (growth process) chambers have been analyzed. Convective gas flows have been considered for two growth chamber gas supply options: basic supply, i.e., through the top central inlet hole only, and combined, i.e., with additional gas supply through the lateral inlet hole. Gas outlet is through the growth chamber bottom outlet hole for both options. For the cold chamber option, forced convection has been studied using the incompressible ideal gas model. For hot chamber, both the nonisothermal compressible ideal gas model and the weakly compressible gas model in the Boussinesq approximation have been used for studying the vortex structure produced by a joint action of forced and thermal-gravitational convection. The effect of different gas inlet methods on the convective transport of silicon monoxide evaporating from the free melt surface has been discussed. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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