Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

Autor:	Kriouche N, Leroux M, Vennéguès P, Nemoz M, Nataf G, de Mierry P
Jazyk:	angličtina
Rok vydání:	2010
Předmět:	Semipolar GaN Epitaxial lateral overgrowth TEM Photoluminescence Polarization Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Nanoscale Research Letters, Vol 5, Iss 12, Pp 1878-1881 (2010)
Druh dokumentu:	article
ISSN:	1931-7573 1556-276X
DOI:	10.1007/s11671-010-9724-9
Popis:	Abstract Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the improvement of the crystalline quality were attested by transmission electron microscopy and low temperature photoluminescence. The temperature dependence of the luminescence polarization under normal incidence was also studied.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/f08b042558b04170a2856b847c85d3d6 Zobrazit plný text záznamu Full text from SpringerLink View record in DOAJ