| Autor: |
S. A. Chambers, D. Lee, Z. Yang, Y. Huang, W. Samarakoon, H. Zhou, P. V. Sushko, T. K. Truttmann, L. W. Wangoh, T.-L. Lee, J. Gabel, B. Jalan |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 10, Iss 7, Pp 070903-070903-9 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/5.0098500 |
| Popis: |
We combine state-of-the-art oxide epitaxial growth by hybrid molecular beam epitaxy with transport, x-ray photoemission, and surface diffraction, along with classical and first-principles quantum mechanical modeling to investigate the nuances of insulating layer formation in otherwise high-mobility homoepitaxial n-SrTiO3(001) films. Our analysis points to charge immobilization at the buried n-SrTiO3/undoped SrTiO3(001) interface as well as within the surface contamination layer resulting from air exposure as the drivers of electronic dead-layer formation. As Fermi level equilibration occurs at the surface and the buried interface, charge trapping reduces the sheet carrier density (n2D) and renders the n-STO film insulating if n2D falls below the critical value for the metal-to-insulator transition. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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