| Autor: |
Daniel Hessler, Ricardo Olivo, Tim Baldauf, Konrad Seidel, Raik Hoffmann, Chaiwon Woo, Maximilian Lederer, Yannick Raffel |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Memories - Materials, Devices, Circuits and Systems, Vol 7, Iss , Pp 100095- (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2773-0646 |
| DOI: |
10.1016/j.memori.2023.100095 |
| Popis: |
This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once with organic precursor materials and once with chloridic precursor materials. The investigation shows an improvement in the noise behavior when using chloridic precursor materials. Regarding the main noise source, which are divided into fluctuation of the number of carriers (ΔN) and fluctuation of the effective transistor mobility (Δμ), the results show that the devices fabricated with organic precursor materials show typical behavior of ΔN noise, where the devices fabricated with chloridic precursor materials show typical behavior of Δμ noise. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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