Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods
| Autor: | Pavol Pisecny, Lubica Stuchlikova, Ladislav Harmatha, Milan Tapajna, Otto Csabay |
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| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 269-272 (2004) |
| Druh dokumentu: | article |
| ISSN: | 1336-1376 1804-3119 |
| Popis: | The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has braought increase of interface trap density Dit and a sharp decrease in the generation parameters tr and τg. The parameters of nine deep levels were detected in the investigation MOS structures. Eight of these levels were radiation defects. |
| Databáze: | Directory of Open Access Journals |
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