High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO2 Thin Film with Non-Identical Pulse Waveforms

Autor: Ke-Jing Lee, Yu-Chuan Weng, Li-Wen Wang, Hsin-Ni Lin, Parthasarathi Pal, Sheng-Yuan Chu, Darsen Lu, Yeong-Her Wang
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Nanomaterials, Vol 12, Iss 18, p 3252 (2022)
Druh dokumentu: article
ISSN: 2079-4991
DOI: 10.3390/nano12183252
Popis: We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO2 thin film surface to argon (Ar) plasma. The results showed significant improvements in electrical and synaptic properties, including memory window, linearity, pattern recognition accuracy, and synaptic weight modulations. Furthermore, we proposed a non-identical pulse waveform for further improvement in linearity accuracy. From the simulation results, the Ar plasma processing device using the designed waveform as the input signals significantly improved the off-chip training and inference accuracy, achieving 96.3% training accuracy and 97.1% inference accuracy in only 10 training cycles.
Databáze: Directory of Open Access Journals