| Autor: |
Hoon Min Kim, Useong Kim, Chulkwon Park, Hyukwoo Kwon, Kookrin Char |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 4, Iss 5, Pp 056105-056105-7 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/1.4952609 |
| Popis: |
We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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