| Autor: |
Simon Fafard, Denis P. Masson |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Photonics, Vol 9, Iss 8, p 579 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2304-6732 |
| DOI: |
10.3390/photonics9080579 |
| Popis: |
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5 thin subcells (PT5), connected by transparent tunnel junctions. Unprecedented conversion efficiencies of up to 74.7% are measured at temperatures around 150 K. At temperatures around 77 K, a remarkably low bandgap offset value of Woc = 71 mV is obtained at an optical input intensity of ~7 W/cm2. At 77 K, the PT5 retains an efficiency of 65% with up to 0.3 W of converted output power. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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