| Autor: |
Changhyun Lee, Soohyun Bae, HyunJung Park, Dongjin Choi, Hoyoung Song, Hyunju Lee, Yoshio Ohshita, Donghwan Kim, Yoonmook Kang, Hae-Seok Lee |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Energies, Vol 13, Iss 3, p 678 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
1996-1073 |
| DOI: |
10.3390/en13030678 |
| Popis: |
Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation. This study focuses on characterizing an electron-selective passivated contact layer with this oxidized method. Subsequently, the SiO2/TiO2 stack was examined using high-resolution transmission electron microscopy. The phase and chemical composition of the titanium oxide films were analyzed using X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The passivation quality of each layer was confirmed by measuring the carrier lifetime using quasi-steady-state photoconductance, providing an implied open circuit voltage of 644 mV. UV−vis spectroscopy and UV photoelectron spectroscopy analyses demonstrated the band alignment and carrier selectivity of the TiO2 layers. Band offsets of ~0.33 and ~2.6 eV relative to the conduction and valence bands, respectively, were confirmed for titanium oxide and the silicon interface. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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