| Autor: |
Adem Koçyiğit, Adem Sarılmaz, Teoman Öztürk, Faruk Ozel, Murat Yıldırım |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Beilstein Journal of Nanotechnology, Vol 12, Iss 1, Pp 984-994 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2190-4286 |
| DOI: |
10.3762/bjnano.12.74 |
| Popis: |
In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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