Enhanced Hole Extraction of WOx/V2Ox Dopant‐Free Contact for p‐type Silicon Solar Cell

Autor: Zongtao Liu, Wenjie Lin, Zhiming Chen, Daming Chen, Yifeng Chen, Hui Shen, Zongcun Liang
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Advanced Materials Interfaces, Vol 9, Iss 10, Pp n/a-n/a (2022)
Druh dokumentu: article
ISSN: 2196-7350
64871908
DOI: 10.1002/admi.202102374
Popis: Abstract Nonstoichiometric vanadium oxide V2Ox has been demonstrated to serve as a hole‐selective contact in crystalline silicon solar cells. A reaction between V2Ox deposited by thermal evaporation and silicon can, however, result in a decreased work function (WF) and reduce hole selectivity. A straightforward and workable solution is presented in this study, which partially restores the WF of V2Ox as deposited on silicon and improving solar cell efficiency, avoiding the use of amorphous silicon. Incorporating WOx into the Ag/V2Ox1/Si structure, to form Ag/WOx/V2Ox2/Si, x1
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