| Autor: |
Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei D. Zhang, Nour E. Bourzgui, Ali Soltani |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 6, Pp 42721-42728 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2018.2861323 |
| Popis: |
Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic contacts has been observed. Synchrotron radiation-based high-resolution X-ray diffraction technique combined with drift-diffusion simulations show that strain reduction at the vicinity of ohmic contacts increases electric field at these locations, resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short- and long-channel gateless devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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