| Autor: |
Haifeng Wu, Xiao Lin, Qin Shuai, Youliang Zhu, Yi Fu, Xiaoqin Liao, Yazhou Wang, Yizhe Wang, Chaowei Cheng, Yong Liu, Lei Sun, Xinyi Luo, Xiaoli Zhu, Liancheng Wang, Ziwei Li, Xiao Wang, Dong Li, Anlian Pan |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Light: Science & Applications, Vol 13, Iss 1, Pp 1-11 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2047-7538 |
| DOI: |
10.1038/s41377-024-01639-3 |
| Popis: |
Abstract Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However, Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency, resulting in reduced luminous efficiency and severe brightness non-uniformity. Here, we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers. Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate, which possesses a low dislocation density of 5.25 × 108 cm− 2, small wafer bowing of 16.7 μm, and high wavelength uniformity (standard deviation STDEV |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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