| Autor: |
Edelstein Shahar, Indukuri S. R. K. Chaitanya, Mazurski Noa, Levy Uriel |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Nanophotonics, Vol 11, Iss 19, Pp 4337-4345 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2192-8614 |
| DOI: |
10.1515/nanoph-2022-0203 |
| Popis: |
Novel 2D van der Waals semiconductors facilitate the formation of heterostructures and thus support bandgap engineering for atomically thin modern photonic applications. When these heterostructures form a type II band structure, interlayer excitons (ILEs) are formed as a result of the ultrafast charge transfer between the layers. Here, we present for the first time a waveguide-coupled, mid-IR photodetector and modulator based on the ILE absorption. The device consists of a heterostructure of a single layer of tungsten disulfide (WS2) and a few layers of hafnium disulfide (HfS2) integrated to a silicon waveguide on a sapphire substrate. We measure broadband mid-IR photodetection (3.8–5.5 µm) with responsivity in the order of tens of µA/W and with no significant effect on the waveguide’s transmission. Additionally, we demonstrate waveguide-integrated, mid-IR, all-optical modulation by controlling the ILE population with the interband transition of the individual layers of the heterostructure. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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