Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications
| Autor: | Milan Ťapajna |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Crystals, Vol 10, Iss 12, p 1153 (2020) |
| Druh dokumentu: | article |
| ISSN: | 10121153 2073-4352 |
| DOI: | 10.3390/cryst10121153 |
| Popis: | GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented performance in terms of power, frequency, and efficiency. Application of metal-insulator-semiconductor (MIS) gate structure has enabled further development of these devices by improving the gate leakage characteristics, gate controllability, and stability, and offered several approaches to achieve E-mode operation desired for switching devices. Yet, bias-temperature instabilities (BTI) in GaN MIS transistors represent one of the major concerns. This paper reviews BTI in D- and E-mode GaN MISHEMTs and fully recess-gate E-mode devices (MISFETs). Special attention is given to discussion of existing models describing the defects distribution in the GaN-based MIS gate structures as well as related trapping mechanisms responsible for threshold voltage instabilities. Selected technological approaches for improving the dielectric/III-N interfaces and techniques for BTI investigation in GaN MISHEMTs and MISFETs are also outlined. |
| Databáze: | Directory of Open Access Journals |
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