Characterization of SOI MOSFETs by means of charge-pumping

Autor:	Grzegorz Głuszko, Sławomir Szostak, Heinrich Gottlob, Max Lemme, Lidia Łukasiak
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	charge-pumping electrical characterization interface traps SOI MOSFET Telecommunication TK5101-6720 Information technology T58.5-58.64
Zdroj:	Journal of Telecommunications and Information Technology, Iss 3 (2023)
Druh dokumentu:	article
ISSN:	1509-4553 1899-8852
DOI:	10.26636/jtit.2007.3.832
Popis:	This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/adbaf07b52714d048cad257cc7096153 Zobrazit plný text záznamu View record in DOAJ