| Autor: |
Mamidala Karthik Ram, Neha Tiwari, Dawit Burusie Abdi, Sneh Saurabh |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
IEEE Access, Vol 9, Pp 141321-141328 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2021.3119858 |
| Popis: |
In this paper, with the help of calibrated 2-D simulations, we report a detailed study on the effect of drain induced barrier enhancement on the subthreshold swing and OFF-state current of a short channel MOSFET. We demonstrate that the presence of gate-on-drain overlap in a short channel MOSFET leads to drain induced barrier enhancement (DIBE). We show that as a result of DIBE, a MOSFET can achieve near ideal subthreshold swing, diminished DIBL, constant threshold voltage and improved $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ ratio at room temperature, without being affected by channel length variations. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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