| Autor: |
Jialun Li, Renqiang Zhu, Ka Ming Wong, Kei May Lau |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 12, Pp 318-321 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2024.3386857 |
| Popis: |
This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 $\text{m}\Omega \cdot $ cm2, a high current swing of 1011, and a high breakdown voltage of 850 V with a 5- $\mu \text{m}$ -thick drift layer, leading to a Baliga’s figure of merit (BFOM) of 2.89 GW/cm2. The diode performance at elevated temperatures and the OFF-state leakage mechanism are analyzed. The demonstrated fully-vertical GaN-on-SiC p-i-n diode with a conductive buffer reveals a simple way towards realizing high-performance fully-vertical GaN-on-SiC devices for high power applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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