| Autor: |
Piotr Mazur, Agata Sabik, Rafał Lewandków, Artur Trembułowicz, Miłosz Grodzicki |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Crystals, Vol 12, Iss 12, p 1847 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst12121847 |
| Popis: |
In this work the n-GaN(1000) surface is used as a source of nitrogen atoms in order to obtain niobium nitride film by a surface-mediated nitridation technique. To this end, the physical vapor deposition of the niobium film on GaN is followed by sample annealing at 1123 K. A thermally induced decomposition of GaN and interfacial mixing phenomena lead to the formation of a niobium nitride compound, which contains Nb from thin film and N atoms from the substrate. The processes allowed the obtaining of ordered NbNx films on GaN. Structural and chemical properties of both the GaN substrate and NbNx films were studied in-situ by surface-sensitive techniques, i.e., X-ray and UV photoelectron spectroscopies (XPS/UPS) and a low-energy electron diffraction (LEED). Then, the NbNx/GaN surface morphology was investigated ex-situ by scanning tunneling microscopy (STM). |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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