Preparation and Characterization of High Quality SnO2 Films Grown by (HPCVD)

Autor: Baha T. Chiad, Nathera Ali, Nagam Th.Ali
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: Engineering and Technology Journal, Vol 32, Iss 4B, Pp 801-810 (2014)
Druh dokumentu: article
ISSN: 1681-6900
2412-0758
DOI: 10.30684/etj.32.4B.20
Popis: In this research SnO2 thin films have been prepared by using hot plate atmospheric pressure chemical vapor deposition (HPCVD) on glass and Si (n-type) substrates at various temperatures. Optical properties have been measured by UV-VIS spectrophotometer, maximum transmittance about (94%) at 400 0C. Structure properties have been studied by using X-ray diffraction (XRD) , its shows that all films have a crystalline structure in nature and by increasing growth temperature from(350-500) 0C diffraction peaks becomes sharper and grain size has been change. Atomic force microscopy (AFM) uses to analyze the morphology of the Tine Oxides surface structure. Roughness & Root mean square for different temperature have been investigated. The results show that both increase with substrate temperature increase this measurements deal with X-Ray diffraction results, that there is large change in the structure state of SnO2 thin f film by changing temperature parameter.
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