Temperature-dependent Raman-active phonon modes and electron−phonon coupling in β-Ga2O3 microwire

Autor: Rongcheng Yao, Lingyu Wan, Bingsheng Li, Yuefei Wang
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Applied Physics Express, Vol 17, Iss 1, p 012004 (2024)
Druh dokumentu: article
ISSN: 1882-0786
DOI: 10.35848/1882-0786/ad135c
Popis: The lattice vibration and electron-phonon coupling (EPC) in β -Ga _2 O _3 microwire are systematically investigated. The β -Ga _2 O _3 microwire that is (020)-oriented shows 14 Raman peaks, with all their FWHM narrower than those of (100)-oriented β -Ga _2 O _3 bulk single crystal. As the temperature increases from 80 to 300 K, most Raman-active phonon modes are blueshifted, while a few modes are first blueshifted and then redshifted. The photoluminescence mainly originates from the recombination of self-trapping exciton and the quantitative analysis reveals that there exists quite strong EPC in β -Ga _2 O _3 microwire and the Huang–Rhys factor is up to Sʹ ≈ 14.
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